DRIE Process Assistant

GUARDRAIL: STRICT
OFFLINE
Presets:
SYS-DRIE-V4

Versaline Process Configurator

Deep Reactive-Ion Etching (Bosch Process) Control & Telemetry Module

ETCH DEPTH Si TRENCH
0.0 nm
PASSIVATION FILM C4F8 POLYMER
0.0 nm
BOSCH CYCLE LOOP ITERATION
0 / 5
ACTIVE PROCESS STEP STANDBY
Gas Stabilization
Chamber Cross-Section & Trench Profile
PHASE: CHAMBER STANDBY | P = 20 mTorr
ICP DISCHARGE OFF (RF3: 0 W | RF2: 0 W) PHOTORESIST MASK PHOTORESIST MASK Si SUBSTRATE Si SUBSTRATE HELIUM BACKSIDE COOLED ELECTROSTATIC CHUCK (CHILLER ONLINE)
Active Step Setpoints
CHAMBER PRESS: 20 mTorr
C4F8 / SF6 FLOW: 0 / 75 sccm
RF1 (380 kHz): 0 W
RF2 (13.6 MHz): 0 W
RF3 (ICP SOURCE): 0 W

Process Recipe Matrix

Hover over any step name or column header for a simple explanation. Steps 4–6 repeat iteratively.

EDITABLE